Toshiba - MIG10J503L

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MIG10J503L by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number MIG10J503L
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 43 W; Maximum Collector Current (IC): 10 A; Maximum VCEsat: 2.1 V; No. of Elements: 1; Maximum Operating Temperature: 100 Cel;
Datasheet MIG10J503L Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 10 A
Maximum Power Dissipation (Abs): 43 W
Maximum Collector-Emitter Voltage: 600 V
No. of Elements: 1
Maximum Operating Temperature: 100 Cel
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 2.1 V
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