Toshiba - MIG10J855E

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MIG10J855E by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number MIG10J855E
Description Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 10 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 600 V; Maximum Gate-Emitter Voltage: 20 V;
Datasheet MIG10J855E Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 10 A
Maximum Power Dissipation (Abs): 40 W
Maximum Collector-Emitter Voltage: 600 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 2.8 V
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