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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | MIG25Q806HA |
| Description | Insulated Gate Bipolar Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 35 A; No. of Elements: 3; Maximum VCEsat: 3.2 V; |
| Datasheet | MIG25Q806HA Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 35 A |
| Sub-Category: | Insulated Gate BIP Transistors |
| Surface Mount: | NO |
| No. of Terminals: | 24 |
| Qualification: | Not Qualified |
| Maximum Power Dissipation (Abs): | 200 W |
| Maximum Collector-Emitter Voltage: | 1200 V |
| Terminal Position: | UPPER |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PUFM-T24 |
| No. of Elements: | 3 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Gate-Emitter Voltage: | 20 V |
| Maximum VCEsat: | 3.2 V |
