Toshiba - MIG30J951H

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MIG30J951H by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number MIG30J951H
Description Insulated Gate Bipolar Transistors; Maximum Collector Current (IC): 30 A; Maximum Collector-Emitter Voltage: 600 V; Maximum Operating Temperature: 150 Cel; Maximum Gate-Emitter Voltage: 20 V; Maximum VCEsat: 4 V;
Datasheet MIG30J951H Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 30 A
Maximum Collector-Emitter Voltage: 600 V
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Sub-Category: Insulated Gate BIP Transistors
Maximum VCEsat: 4 V
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