Toshiba - MIG50J906H

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MIG50J906H by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number MIG50J906H
Description Insulated Gate Bipolar Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 50 A; JESD-30 Code: R-XUFM-X24; Maximum Collector-Emitter Voltage: 600 V;
Datasheet MIG50J906H Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): 50 A
Sub-Category: Insulated Gate BIP Transistors
Surface Mount: NO
No. of Terminals: 24
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 200 W
Maximum Collector-Emitter Voltage: 600 V
Terminal Position: UPPER
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-XUFM-X24
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: UNSPECIFIED
Maximum Operating Temperature: 150 Cel
Maximum Gate-Emitter Voltage: 20 V
Maximum VCEsat: 2.7 V
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