
Image shown is a representation only.
Manufacturer | Toshiba |
---|---|
Manufacturer's Part Number | MP4702 |
Description | N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Drain Current (ID): 3 A; Terminal Position: SINGLE; No. of Terminals: 12; |
Datasheet | MP4702 Datasheet |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Maximum Drain Current (ID): | 3 A |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | NO |
No. of Terminals: | 12 |
Minimum DS Breakdown Voltage: | 120 V |
Qualification: | Not Qualified |
Terminal Position: | SINGLE |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PSFM-T12 |
No. of Elements: | 4 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Operating Mode: | ENHANCEMENT MODE |
Case Connection: | ISOLATED |
Maximum Power Dissipation Ambient: | 36 W |
Maximum Drain-Source On Resistance: | .74 ohm |