MP6501A by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	MP6501A
Description	NPN; Configuration: COMPLEX; Surface Mount: NO; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 15 A; Minimum DC Current Gain (hFE): 100;
Datasheet	MP6501A Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	15 A
Configuration:	COMPLEX
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	1000 ns
Sub-Category:	BIP General Purpose Power
Surface Mount:	NO
Terminal Finish:	Tin/Lead (Sn/Pb)
No. of Terminals:	11
Maximum Power Dissipation (Abs):	60 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
Maximum Turn Off Time (toff):	15000 ns
JESD-30 Code:	R-PSFM-T11
No. of Elements:	6
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Fall Time (tf):	3000 ns
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	100
JESD-609 Code:	e0
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	400 V
Maximum VCEsat:	2.1 V

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