Toshiba - MT3S111TULF(T

  1. Home
  2. Toshiba - MT3S111TULF(T
MT3S111TULF(T by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number MT3S111TULF(T
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .1 A;
Datasheet MT3S111TULF(T Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 10000 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON GERMANIUM
Transistor Application: AMPLIFIER
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): .8 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Minimum Power Gain (Gp): 10.5 dB
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 200
Maximum Collector-Emitter Voltage: 6 V
Additional Features: LOW NOISE
Maximum Collector-Base Capacitance: 1.45 pF
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MMBT918LT3 by Onsemi

MMBT918LT3

Onsemi

MMBT918LT3 by Onsemi is an NPN RF BJT with a max fT of 600 MHz. It has a VCEO of 15V and IC of 0.05A, making it suitable for ultra-high frequency applications. With a small outline package and Gull Wing terminals, it is ideal for surface mount designs in the UHF band.
MPSH10RL by Onsemi

MPSH10RL

Onsemi

MPSH10RL by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 25V and fT of 650MHz. It is used in ultra-high frequency applications due to its low capacitance (0.7pF) and high transition frequency. The transistor's cylindrical package with through-hole terminals makes it suitable for various RF small signal circuits.
2SC5662T2LP by ROHM

2SC5662T2LP

ROHM

ROHM 2SC5662T2LP is a NPN RF BJT transistor with max. fT of 3200 MHz, hFE of 56, and VCE(max) of 11V. Ideal for S Band applications like amplifiers due to its small outline package and high transition frequency capability.
CA3083M96 by Rochester Electronics

CA3083M96

Rochester Electronics

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 450 MHz; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;
CA3083M by Intersil

CA3083M

Intersil

CA3083M by Intersil is a NPN BJT with 5 elements, ideal for high-frequency switching applications. With a max fT of 450 MHz and IC of 0.1 A, it operates in the VHF band and comes in a small outline package for surface mounting.
MMBTH11 by Fairchild Semiconductor

MMBTH11

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;
934067711215 by NXP Semiconductors

934067711215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10500 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .05 A;
2N5109 by Intersil

2N5109

Intersil

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .4 A; No. of Elements: 1; Terminal Form: WIRE;
BFR92PE6327HTSA1 by Infineon Technologies

BFR92PE6327HTSA1

Infineon Technologies

BFR92PE6327HTSA1 by Infineon is a NPN RF BJT transistor with max fT of 5000 MHz. It's ideal for L Band applications, featuring a max IC of 0.03 A and hFE of 70. With a package style of Small Outline, it operates up to 150 °C and has a max VCE of 15 V.
2N4429 by STMicroelectronics

2N4429

STMicroelectronics

2N4429 by STMicroelectronics is an NPN RF BJT designed for amplifier applications, featuring a max power dissipation of 5W and a nominal transition frequency of 700 MHz. It operates in the ultra-high frequency band with a max temp of 200 °C. Its flat, round package ensures efficient mounting.
NSVF6003SB6T1G by Onsemi

NSVF6003SB6T1G

Onsemi

NSVF6003SB6T1G by Onsemi is an NPN BJT transistor with a max operating temp of 150 °C. With a min hFE of 100 and fT of 7000 MHz, it's ideal for amplifier applications in the UHF band. This small outline package has Gull Wing terminals and can handle up to 0.15A collector current.
2N3866 by Intersil

2N3866

Intersil

NPN; Nominal Transition Frequency (fT): 1000 MHz; No. of Elements: 1; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Qualification: Not Qualified; Transistor Element Material: SILICON;
2SA1857 by Onsemi

2SA1857

Onsemi

The Onsemi 2SA1857 is a PNP RF BJT transistor with VCEsat of 0.3V, hFE of 60, and fT of 750MHz. Ideal for amplifier applications in the very high-frequency band, it has a max operating temp of 150 °C and max collector-emitter voltage of 12V.
BF776H6327XTSA1 by Infineon Technologies

BF776H6327XTSA1

Infineon Technologies

Infineon's BF776H6327XTSA1 is a NPN BJT transistor for ultra-high frequency amplification. With 4 terminals, it operates at max 150°C and has a fT of 46GHz. Its plastic package with gull wing terminals makes it suitable for surface mount applications.
BFP182WH6327XTSA1 by Infineon Technologies

BFP182WH6327XTSA1

Infineon Technologies

BFP182WH6327XTSA1 by Infineon is a NPN RF BJT transistor with 4 terminals, suitable for L Band applications. It has a max collector-emitter voltage of 12V, fT of 8000 MHz, and IC of 0.035A. Ideal for amplifier circuits due to its high transition frequency and low collector-base capacitance.
MPS3563RL by Onsemi

MPS3563RL

Onsemi

MPS3563RL by Onsemi is an NPN BJT transistor with 600 MHz fT, 12V VCEO, and 1.7pF CCB. Ideal for amplifier applications in the UHF band due to its high frequency capabilities and low collector current of 0.05A. Package style is cylindrical with through-hole terminals for easy installation.
BFR93AR by Temic Semiconductors

BFR93AR

Temic Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Maximum Collector-Emitter Voltage: 12 V;
2SC5226A-4-TL-E by Sanyo Semiconductor

2SC5226A-4-TL-E

Sanyo Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7000 MHz; Maximum Collector Current (IC): .07 A; Package Body Material: PLASTIC/EPOXY;
MPS5179ZL1 by Onsemi

MPS5179ZL1

Onsemi

MPS5179ZL1 by Onsemi is an NPN RF BJT with a max collector-emitter voltage of 12V and fT of 900MHz. Ideal for amplifier applications, it has a max collector current of 0.05A and a package style of cylindrical PLASTIC/EPOXY.
MMBTH81LT3 by Onsemi

MMBTH81LT3

Onsemi

The Onsemi MMBTH81LT3 is a PNP RF BJT with 600 MHz fT, 20V VCEO, and 0.85pF CCB. Ideal for UHF applications, it features a Gull Wing terminal form in a small outline package. Suitable for high-frequency designs requiring compact size and low capacitance.