MUZ5V6,LF by Toshiba | Diodes

Image shown is a representation only.

Manufacturer	Toshiba
Manufacturer's Part Number	MUZ5V6,LF
Description	ZENER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Datasheet	MUZ5V6,LF Datasheet

NAME	DESCRIPTION
Other Names:	264-MUZ5V6,LFCT-ND 264-MUZ5V6,LFDKR-ND 264-MUZ5V6,LFTR-ND 264-MUZ5V6,LFTR 264-MUZ5V6,LFDKR 264-MUZ5V6,LFCT MUZ5V6,LF(B
Package Body Material:	PLASTIC/EPOXY
Reverse Test Voltage:	3.5 V
Working Test Current:	5 mA
Config:	SINGLE
Diode Type:	ZENER DIODE
Surface Mount:	YES
Maximum Reverse Current:	1 uA
Maximum Voltage Tolerance:	6.19 %
Diode Element Material:	SILICON
No. of Terminals:	3
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Technology:	ZENER
JESD-30 Code:	R-PDSO-G3
Nominal Reference Voltage:	5.6 V
No. of Elements:	1
Package Shape:	RECTANGULAR
Maximum Power Dissipation:	.6 W
Terminal Form:	GULL WING
Polarity:	UNIDIRECTIONAL
Maximum Operating Temperature:	150 Cel
Reference Standard:	IEC-61000-4-2, 4-5
Maximum Dynamic Impedance:	30 ohm

Popular Products

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain-Source On Resistance: 5 ohm; No. of Terminals: 3;

RECTIFIER DIODE; Surface Mount: NO; No. of Phases: 1; Maximum Operating Temperature: 200 Cel; Config: SINGLE; No. of Elements: 1;

Diodes Incorporated BAV99W-7-F is a fast recovery rectifier diode with 2 elements in series connected, center tap configuration. It has a max reverse recovery time of 0.004 us and can handle a max output current of 0.15 A. Ideal for applications requiring fast switching capabilities and operating temperatures ranging from -65 to 150 °C.

NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.

BSS123-7-F by Diodes Inc. is a N-channel FET with 100V DS breakdown voltage and 0.17A drain current. Ideal for switching applications, it features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.