Toshiba - RFM03U3CT

  1. Home
  2. Toshiba - RFM03U3CT
RFM03U3CT by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number RFM03U3CT
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 7 W; JESD-30 Code: S-XBCC-N3; Package Body Material: UNSPECIFIED;
Datasheet RFM03U3CT Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 2.5 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 16 V
Maximum Power Dissipation (Abs): 7 W
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: S-XBCC-N3
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Highest Frequency Band: ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 2.5 A
Case Connection: SOURCE
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

QPD1008L by Qorvo

QPD1008L

Qorvo

Qorvo's QPD1008L is a single N-channel RF FET with GaN technology, operating in S band. It features a ceramic-metal sealed co-fired package for high electron mobility, suitable for amplifier applications. With a max temperature of 85°C and dual terminal position, it offers reliable performance in various environments.
934061964112 by NXP Semiconductors

934061964112

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Case Connection: SOURCE; Terminal Form: FLAT; JESD-30 Code: R-CDFM-F5;
GS66508T-MR by Gan Systems

GS66508T-MR

Gan Systems

GS66508T-MR by Gan Systems is a N-CHANNEL FET for SWITCHING applications. It operates at 650V with 30A ID, suitable for VERY HIGH FREQUENCY BAND. This ENHANCEMENT MODE transistor in CHIP CARRIER package uses GALLIUM NITRIDE tech and can withstand -55 to 150 °C temperatures.
MRFE6VS25NR1 by Freescale Semiconductor

MRFE6VS25NR1

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum Operating Temperature: -40 Cel; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
TRF7003PK by Texas Instruments

TRF7003PK

Texas Instruments

TRF7003PK by Texas Instruments is a single N-channel RF Power FET for amplifier applications. It operates in enhancement mode with a max drain current of 2A and breakdown voltage of 15V. Ideal for ultra-high frequency bands, it features a small outline package and can withstand temperatures up to 85°C.
PD85015TRM-E by STMicroelectronics

PD85015TRM-E

STMicroelectronics

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
TGF2023-2-02 by Qorvo

TGF2023-2-02

Qorvo

Qorvo's TGF2023-2-02 is an N-channel RF Power FET for amplifier applications in KU band. Featuring GaN technology, it has a max ID of 2.5A and operates in depletion mode. This single-configured transistor is surface-mountable with Ni/Au terminal finish.
MRF1K50NR5 by NXP Semiconductors

MRF1K50NR5

NXP Semiconductors

RF Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 40; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
PD55035-E by STMicroelectronics

PD55035-E

STMicroelectronics

PD55035-E by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 7 A, a breakdown voltage of 40 V, and operates in the ultra-high frequency band. This compact device supports surface mount technology with a max power dissipation of 95 W.
SD4933 by STMicroelectronics

SD4933

STMicroelectronics

SD4933 by STMicroelectronics is an N-channel RF power FET designed for ultra-high frequency applications. It features a max drain current of 40 A, a breakdown voltage of 200 V, and can dissipate up to 648 W. Ideal for high-performance RF amplification in compact designs.
934061845118 by NXP Semiconductors

934061845118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 65 V; Package Style (Meter): SMALL OUTLINE; JESD-30 Code: R-CDSO-G2;
934065908118 by NXP Semiconductors

934065908118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; No. of Elements: 1; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
MRF8S9200NR3 by NXP Semiconductors

MRF8S9200NR3

NXP Semiconductors

NXP Semiconductors' MRF8S9200NR3 is an N-CHANNEL RF Power FET for ULTRA HIGH FREQUENCY BAND applications. It operates in ENHANCEMENT MODE with a 70V DS Breakdown Voltage and can handle up to 225°C temperature, making it suitable for AMPLIFIER circuits.
MRF186 by Freescale Semiconductor

MRF186

Freescale Semiconductor

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; JESD-30 Code: R-CDFM-F4; Terminal Position: DUAL; Package Shape: RECTANGULAR;
MRF284S by Freescale Semiconductor

MRF284S

Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; JESD-30 Code: R-CDFP-F2; Terminal Form: FLAT;
A3T21H360W23SR6 by NXP Semiconductors

A3T21H360W23SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): 40; Peak Reflow Temperature (C): 260;
BLF6G27S-45,112 by Ampleon Netherlands B V

BLF6G27S-45,112

Ampleon Netherlands B V

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Package Style (Meter): FLATPACK; Terminal Form: FLAT;
A3G18D510-04SR3 by NXP Semiconductors

A3G18D510-04SR3

NXP Semiconductors

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Peak Reflow Temperature (C): 260; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Operating Mode: DEPLETION MODE;
LET20030C by STMicroelectronics

LET20030C

STMicroelectronics

LET20030C by STMicroelectronics is an N-channel RF power FET designed for amplifier applications. It features a max drain current of 4 A, a breakdown voltage of 65 V, and operates in the L band. This surface-mount transistor supports high efficiency with a max temp of 200 °C.
A2T23H300-24SR6 by NXP Semiconductors

A2T23H300-24SR6

NXP Semiconductors

RF Power Field-Effect Transistors; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 40;