RFM12U7X by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	RFM12U7X
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 20 W; Transistor Element Material: SILICON; Package Body Material: UNSPECIFIED;
Datasheet	RFM12U7X Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	4 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	20 V
Maximum Power Dissipation (Abs):	20 W
Terminal Position:	QUAD
Package Style (Meter):	FLATPACK
JESD-30 Code:	R-XQFP-F4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	4 A
Case Connection:	SOURCE

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