RN1101MFV,L3F by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	RN1101MFV,L3F
Description	NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Terminal Position: DUAL;
Datasheet	RN1101MFV,L3F Datasheet

NAME	DESCRIPTION
Other Names:	RN1101MFV,L3F(B RN1101MFVL3FCT RN1101MFV,L3F(T RN1101MFVL3FDKR RN1101MFVL3FTR
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Configuration:	SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	30
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.15 W
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Additional Features:	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum Operating Temperature:	150 Cel
Maximum Collector-Base Capacitance:	.7 pF
Maximum VCEsat:	.3 V

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