RN1102ACT by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	RN1102ACT
Description	NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .08 A; No. of Elements: 1; Package Shape: RECTANGULAR;
Datasheet	RN1102ACT Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	.08 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	50
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-XBCC-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Additional Features:	BUILT-IN BIAS RESISTOR RATIO IS 1
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Peak Reflow Temperature (C):	NOT SPECIFIED

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