Toshiba - RN1105ACT(TPL3)

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RN1105ACT(TPL3) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number RN1105ACT(TPL3)
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; Transistor Element Material: SILICON; No. of Elements: 1;
Datasheet RN1105ACT(TPL3) Datasheet
NAME DESCRIPTION
Other Names: RN1105ACT(TPL3)TR
RN1105ACT(TPL3)CT
RN1105ACT(TPL3)DKR
RN1105ACT (TPL3)
Maximum Collector Current (IC): .08 A
Maximum Power Dissipation (Abs): .1 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 80
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