Toshiba - RN1107(TE85L,F)

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RN1107(TE85L,F) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number RN1107(TE85L,F)
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 80; No. of Elements: 1;
Datasheet RN1107(TE85L,F) Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .1 W
Maximum Time At Peak Reflow Temperature (s): 30
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Peak Reflow Temperature (C): 260
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 80
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