RN1109ACT by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	RN1109ACT
Description	NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .08 A; Maximum Collector-Emitter Voltage: 50 V; No. of Terminals: 3;
Datasheet	RN1109ACT Datasheet

NAME	DESCRIPTION
Package Body Material:	UNSPECIFIED
Maximum Collector Current (IC):	.08 A
Configuration:	SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	70
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
JESD-30 Code:	R-XBCC-N3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Additional Features:	BUILT-IN BIAS RESISTOR RATIO IS 0.47
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR

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