Toshiba - RN1206

RN1206 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number RN1206
Description NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
Datasheet RN1206 Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 250 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: BIP General Purpose Small Signal
Surface Mount: NO
Terminal Finish: TIN LEAD
No. of Terminals: 3
Maximum Power Dissipation (Abs): .3 W
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 150 Cel
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 80
JESD-609 Code: e0
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 10
Maximum Collector-Base Capacitance: 6 pF
Maximum VCEsat: .3 V
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