Toshiba - RN1307,LXHF

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RN1307,LXHF by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number RN1307,LXHF
Description NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A;
Datasheet RN1307,LXHF Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 250 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): .1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Maximum Power Dissipation Ambient: .1 W
Other Names: 264-RN1307,LXHFTR
264-RN1307LXHFTR
264-RN1307,LXHFCT-ND
264-RN1307,LXHFDKR
264-RN1307,LXHFCT
264-RN1307LXHFCT
264-RN1307,LXHFDKR-ND
264-RN1307LXHFDKR
264-RN1307,LXHFTR-ND
Polarity or Channel Type: NPN
Minimum DC Current Gain (hFE): 80
Maximum Collector-Emitter Voltage: 50 V
Additional Features: BUILT IN BIAS RESISTANCE RATIO IS 4.7
Maximum Collector-Base Capacitance: 6 pF
Reference Standard: AEC-Q101
Maximum VCEsat: .3 V
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