Toshiba - RN1312(TE85L,F)

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RN1312(TE85L,F) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number RN1312(TE85L,F)
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet RN1312(TE85L,F) Datasheet
NAME DESCRIPTION
Other Names: RN1312(TE85LF)CT
RN1312(TE85LF)
RN1312TE85LF
RN1312(TE85LF)DKR
RN1312(TE85LF)-ND
RN1312(TE85LF)TR
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .15 W
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 120
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