Toshiba - RN1325A

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RN1325A by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number RN1325A
Description NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .5 A;
Datasheet RN1325A Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 300 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .5 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 140
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .1 W
Maximum Collector-Emitter Voltage: 12 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: BUILT IN BIAS RESISTOR RATIO IS 21.28
Maximum Operating Temperature: 150 Cel
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