RN1605TE85N by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	RN1605TE85N
Description	NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;
Datasheet	RN1605TE85N Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	250 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	NPN
Surface Mount:	YES
Minimum DC Current Gain (hFE):	80
No. of Terminals:	6
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Additional Features:	BUILT-IN BIAS RESISTOR RATIO IS 0.0468
Maximum Operating Temperature:	150 Cel
Maximum Collector-Base Capacitance:	6 pF
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	.3 V

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