Toshiba - RN1905FE(TPL3,F)

  1. Home
  2. Toshiba - RN1905FE(TPL3,F)
RN1905FE(TPL3,F) by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number RN1905FE(TPL3,F)
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 80; No. of Elements: 2;
Datasheet RN1905FE(TPL3,F) Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .1 W
Transistor Element Material: SILICON
No. of Elements: 2
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 80
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SMBT3904DW1T1G by Onsemi

SMBT3904DW1T1G

Onsemi

SMBT3904DW1T1G by Onsemi is a NPN BJT with hFE of 100, fT of 300 MHz, and IC of 0.2 A. Ideal for small signal applications in electronics due to its surface mount capability and max operating temperature of 150°C.
2N2222A by Microsemi

2N2222A

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 30; No. of Elements: 1;
BC817-40 by Nexperia

BC817-40

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;
JANTX2N2222A by Semicoa

JANTX2N2222A

Semicoa

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC547C by Lite-on Semiconductor

BC547C

Lite-on Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 420;
MMBTA42-7-F by Diodes Incorporated

MMBTA42-7-F

Diodes Incorporated

Diodes Inc. MMBTA42-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 40, and VCEO of 300V. Ideal for small outline packages with Gull Wing terminals in surface mount configurations.
MMBT3904 by Rectron

MMBT3904

Rectron

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 40 V;
2N2222A by Continental Device India

2N2222A

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N2222A by Itt Semiconductor

2N2222A

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC847B by Philips Components

BC847B

Philips Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Form: GULL WING;
MMBT3906 by Rectron

MMBT3906

Rectron

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; JESD-30 Code: R-PDSO-G3; Maximum Turn On Time (ton): 70 ns;
2N2222AUB by Central Semiconductor

2N2222AUB

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;
BC547C by Vishay Semiconductors

BC547C

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 420;
BC846A,215 by NXP Semiconductors

BC846A,215

NXP Semiconductors

BC846A,215 by NXP Semiconductors is a NPN BJT transistor for switching applications. It has a max VCEsat of 0.6V and a min DC current gain of 110 (hFE). With a max operating temperature of 150°C, it is suitable for small outline surface mount packages.
BC847B by Itt Semiconductor

BC847B

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
PBHV8540X,115 by Nexperia

PBHV8540X,115

Nexperia

PBHV8540X,115 by Nexperia is a NPN BJT transistor with hFE of 100. It has VCE of 400V and IC of 0.5A, suitable for switching applications. This small outline transistor operates at fT of 30MHz, making it ideal for high-speed electronic circuits.
2N2907A by SPC TECHNOLOGY/ MULTICOMP

2N2907A

SPC TECHNOLOGY/ MULTICOMP

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Terminal Position: BOTTOM;
BC847-C by Infineon Technologies

BC847-C

Infineon Technologies

BC847-C by Infineon Technologies is a NPN BJT transistor with hFE of 420, fT of 250 MHz, and IC of 0.1 A. It is used in amplifier applications due to its max VCE of 45V and operating temp of 150°C. This surface-mount transistor has a Gull Wing terminal form in a small outline package.
2N2219A by Raytheon Semiconductor

2N2219A

Raytheon Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
2N2219A by Crystalonics

2N2219A

Crystalonics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;