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Manufacturer | Toshiba |
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Manufacturer's Part Number | RN1906AFS |
Description | NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .08 A; Minimum DC Current Gain (hFE): 80; JESD-30 Code: R-PDSO-F6; |
Datasheet | RN1906AFS Datasheet |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | .08 A |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR |
Transistor Element Material: | SILICON |
Transistor Application: | SWITCHING |
Polarity or Channel Type: | NPN |
Surface Mount: | YES |
Minimum DC Current Gain (hFE): | 80 |
No. of Terminals: | 6 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 50 V |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-F6 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | FLAT |
Additional Features: | BUILT-IN BIAS RESISTOR RATIO IS 10 |
Maximum Operating Temperature: | 150 Cel |
Peak Reflow Temperature (C): | NOT SPECIFIED |