Toshiba - RN1963FE(TPL3,F)

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RN1963FE(TPL3,F) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number RN1963FE(TPL3,F)
Description NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 70;
Datasheet RN1963FE(TPL3,F) Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .1 W
Transistor Element Material: SILICON
No. of Elements: 2
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 70
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