Toshiba - RN1968FE(TE85L)

  1. Home
  2. Toshiba - RN1968FE(TE85L)
RN1968FE(TE85L) by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number RN1968FE(TE85L)
Description Other Transistors;
Datasheet RN1968FE(TE85L) Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N2907A by Infineon Technologies

2N2907A

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;
2N3055- by General Electric Solid State

2N3055-

General Electric Solid State

2N3055- by General Electric Solid State is an NPN transistor with a max power dissipation of 115W and max collector current of 15A. With a min hFE of 20, it operates up to 200°C, making it ideal for high-power applications like amplifiers and power supplies.
TIP122 by National Semiconductor

TIP122

National Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; JESD-609 Code: e0;
TIP42C by Silicon Group

TIP42C

Silicon Group

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BD139-10 by Comset Semiconductors

BD139-10

Comset Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A; Minimum DC Current Gain (hFE): 63;
BD243C by Inchange Semiconductor

BD243C

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; Minimum DC Current Gain (hFE): 30;
BC807-40 by Vishay Intertechnology

BC807-40

Vishay Intertechnology

Vishay Intertechnology's BC807-40 is a PNP transistor with max. power dissipation of 0.35W, min. DC current gain of 250, and max. collector current of 0.5A. Ideal for surface mount applications in electronics due to its single configuration and matte tin terminal finish, operating up to 150°C efficiently.
BC548 by Jiangsu Changjiang Electronics Technology

BC548

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
IRF9530 by Thomson Consumer Electronics

IRF9530

Thomson Consumer Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
BC846B by Shanghai Lunsure Electronic Technology

BC846B

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
TIP42C by Bharat Electronics

TIP42C

Bharat Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
2N3055 by Plessey Semiconductors Discrete Components Div

2N3055

Plessey Semiconductors Discrete Components Div

2N3055 by Plessey Semiconductors is an NPN transistor with a max power dissipation of 115W and a min DC current gain of 20. It can handle a max collector current of 15A and has a nominal transition frequency of 2.5MHz. This transistor is commonly used in various applications requiring high power amplification or switching capabilities.
TIP41C by Tt Electronics Plc

TIP41C

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP127 by Asi Semiconductor

TIP127

Asi Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
FDN360P-NBGT003B by Fairchild Semiconductor

FDN360P-NBGT003B

Fairchild Semiconductor

FDN360P-NBGT003B by Fairchild Semiconductor is a P-CHANNEL transistor with 2A max drain current and 0.5W power dissipation. It operates in enhancement mode, suitable for surface mount applications. Ideal for circuits requiring high efficiency and low power consumption in temperatures up to 150°C.
MMBTA92 by Unisonic Technologies

MMBTA92

Unisonic Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .5 A;
TIP117 by Iskra Semic Capacitors Industry

TIP117

Iskra Semic Capacitors Industry

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; JESD-609 Code: e0;
TIP3055 by Comset Semiconductors

TIP3055

Comset Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 15 A;
TIP31C by General Electric Solid State

TIP31C

General Electric Solid State

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
2N3019 by North American Philips Discrete Products Div

2N3019

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;