Toshiba - RN2103ACT(TPL3)

  1. Home
  2. Toshiba - RN2103ACT(TPL3)
RN2103ACT(TPL3) by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number RN2103ACT(TPL3)
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .08 A; Minimum DC Current Gain (hFE): 70; No. of Elements: 1;
Datasheet RN2103ACT(TPL3) Datasheet
NAME DESCRIPTION
Other Names: RN2103ACT(TPL3)TR
RN2103ACT(TPL3)CT
RN2103ACT(TPL3)DKR
Maximum Collector Current (IC): .08 A
Maximum Power Dissipation (Abs): .1 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 70
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N3904 by Microsemi

2N3904

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC817-40QAZ by Nexperia

BC817-40QAZ

Nexperia

Small Signal Bipolar Transistors; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30;
BC547BTA by Onsemi

BC547BTA

Onsemi

BC547BTA by Onsemi is a NPN BJT transistor with max. power dissipation of 0.625W, hFE of 200, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 45V and max. collector current of 0.1A in a cylindrical package style.
2N3906 by Vishay Semiconductors

2N3906

Vishay Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Transistor Element Material: SILICON;
2N3904TAR by Fairchild Semiconductor

2N3904TAR

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT2222ALT1G by Onsemi

MMBT2222ALT1G

Onsemi

MMBT2222ALT1G by Onsemi is a NPN BJT transistor with 3 terminals, max power dissipation of 0.3W, and hFE of 75. Ideal for switching applications, it operates b/w -55 to 150 °C with a max collector-emitter voltage of 40V. This surface-mount device has a transition frequency of 300MHz and turn-on time of 35ns.
BC817-40LT1G by Onsemi

BC817-40LT1G

Onsemi

BC817-40LT1G by Onsemi is a NPN BJT with 45V VCEO, 0.5A IC, and 100MHz fT. Ideal for small signal applications in electronics due to its high hFE of 250 and compact SOT-23 package. Operating temperature range from -55°C to 150°C makes it suitable for various environments.
2N2219A by STMicroelectronics

2N2219A

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .6 A;
BC847C by Diotec Semiconductor Ag

BC847C

Diotec Semiconductor Ag

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
2N2219A by Semitronics

2N2219A

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
MMBTA06LT1G by Onsemi

MMBTA06LT1G

Onsemi

MMBTA06LT1G by Onsemi is a NPN BJT transistor with 100 min hFE, 80V VCEO, and 100MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting. Operating temperature ranges from -55 to 150°C.
MMBT2222AWT3G by Onsemi

MMBT2222AWT3G

Onsemi

MMBT2222AWT3G by Onsemi is a small signal NPN transistor with a max collector-emitter voltage of 40V and a max collector current of 0.6A. It is commonly used as an amplifier in various applications.
MMBT3904 by Electronic Devices

MMBT3904

Electronic Devices

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Style (Meter): SMALL OUTLINE;
JANTX2N2222A by Onsemi

JANTX2N2222A

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BCP56-16TX by Nexperia

BCP56-16TX

Nexperia

Nexperia's BCP56-16TX is a NPN BJT transistor with hFE of 100, VCE of 80V, and IC of 1A. Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and fT of 155MHz. Features GULL WING terminals, small outline package, and can withstand peak reflow temp of 260°C.
2N3904 by General Semiconductor

2N3904

General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
JANTX2N2907AUATR by Microchip Technology

JANTX2N2907AUATR

Microchip Technology

Small Signal Bipolar Transistors; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb);
JANTX2N2222A by Defense Logistics Agency

JANTX2N2222A

Defense Logistics Agency

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100; JESD-30 Code: O-MBCY-W3;
JANTX2N2222AUA by Microchip Technology

JANTX2N2222AUA

Microchip Technology

JANTX2N2222AUA by Microchip is a NPN BJT transistor with 4 terminals, ideal for switching applications. It has a max power dissipation of 0.5W, hFE of 30, and can handle up to 0.8A collector current. With a max operating temp of 200°C and fT of 250MHz, it meets MIL-19500/255 standards for high-performance electronics.
BC846B by Good-ark Electronics

BC846B

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;