Toshiba - RN2108F(F)

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RN2108F(F) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number RN2108F(F)
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; No. of Elements: 1;
Datasheet RN2108F(F) Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .1 W
Transistor Element Material: SILICON
No. of Elements: 1
Sub-Category: BIP General Purpose Small Signals
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 80
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