Toshiba - RN2108MFV(TL3PAV)

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RN2108MFV(TL3PAV) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number RN2108MFV(TL3PAV)
Description PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet RN2108MFV(TL3PAV) Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 80
No. of Terminals: 3
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Additional Features: BUILT IN BIAS RESISTANCE RATIO IS 2.14
Peak Reflow Temperature (C): NOT SPECIFIED
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