Toshiba - RN2113ACT(TL3SONY)

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RN2113ACT(TL3SONY) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number RN2113ACT(TL3SONY)
Description PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .08 A; Package Body Material: UNSPECIFIED; Minimum DC Current Gain (hFE): 120;
Datasheet RN2113ACT(TL3SONY) Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): .08 A
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 120
No. of Terminals: 3
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-XBCC-N3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Case Connection: COLLECTOR
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