Toshiba - RN2132MFV

  1. Home
  2. Toshiba - RN2132MFV
RN2132MFV by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number RN2132MFV
Description PNP; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE; Transistor Application: SWITCHING;
Datasheet RN2132MFV Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 120
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Additional Features: BUILT-IN BIAS RESISTOR
Peak Reflow Temperature (C): NOT SPECIFIED
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

JANTX2N2222A by Raytheon Semiconductor

JANTX2N2222A

Raytheon Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; No. of Terminals: 3; Terminal Form: WIRE;
BC857B,215 by Nexperia

BC857B,215

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;
SMMBTA06LT1G by Onsemi

SMMBTA06LT1G

Onsemi

SMMBTA06LT1G by Onsemi is a NPN BJT transistor with 3 terminals, suitable for amplifier applications. It has a max collector-emitter voltage of 80V and can handle a max collector current of 0.5A. With a min DC current gain of 100, it operates at temperatures up to 150°C.
2N2219A by STMicroelectronics

2N2219A

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .6 A;
2N3906 by SPC TECHNOLOGY/ MULTICOMP

2N3906

SPC TECHNOLOGY/ MULTICOMP

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Maximum Turn On Time (ton): 70 ns;
BC817-25 by Siemens

BC817-25

Siemens

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
2N2222AUA by Vpt Components

2N2222AUA

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .8 A; Transistor Element Material: SILICON;
BC547B by Surge Components

BC547B

Surge Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;
BC847BM,315 by NXP Semiconductors

BC847BM,315

NXP Semiconductors

BC847BM,315 by NXP Semiconductors is a NPN BJT transistor with 45V VCEO, 0.1A IC, and 200 hFE. Ideal for switching applications, it operates at up to 150°C and has a transition frequency of 100MHz. This chip carrier package features a plastic/epoxy body and tin finish.
BC847C-7-F by Diodes Incorporated

BC847C-7-F

Diodes Incorporated

BC847C-7-F by Diodes Inc. is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 45V and a min DC current gain of 420. It is commonly used for switching applications due to its surface mount capability and max power dissipation of 0.3W.
BC547B by General Semiconductor

BC547B

General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;
BC547B by Vishay Semiconductors

BC547B

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .1 A; Moisture Sensitivity Level (MSL): 1;
BC807-40W-7 by Diodes Incorporated

BC807-40W-7

Diodes Incorporated

Diodes Inc. BC807-40W-7 is a PNP BJT transistor with 170 min hFE, 45V VCEO, and 100MHz fT. Ideal for switching applications in small outline packages with Gull Wing terminals. Operates up to 150°C with 0.5A IC and 0.2W power dissipation.
MMUN2211LT1G by Onsemi

MMUN2211LT1G

Onsemi

MMUN2211LT1G by Onsemi is a NPN BJT with built-in resistor for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 35. This small outline transistor operates up to 150°C and comes in a rectangular package suitable for surface mount assembly.
2N3904 by Crimson Semiconductor

2N3904

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC847CDW1T1G by Onsemi

BC847CDW1T1G

Onsemi

BC847CDW1T1G by Onsemi is a NPN BJT with 2 elements, hFE of 420. It operates up to 150°C, VCE of 45V, and IC of 0.1A. Ideal for amplifier applications due to its small outline package and high transition frequency of 100MHz.
2N2907A by Motorola

2N2907A

Motorola

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Maximum Power Dissipation Ambient: 1.2 W;
BC847C by Zetex Plc

BC847C

Zetex Plc

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC817-40 by Weitronic Enterprise

BC817-40

Weitronic Enterprise

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
2N2222AUA by Optek Technology

2N2222AUA

Optek Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;