Image shown is a representation only.
| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | RN2506(TE85L,F) |
| Description | PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Peak Reflow Temperature (C): 260; No. of Elements: 2; |
| Datasheet | RN2506(TE85L,F) Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Maximum Collector Current (IC): | .1 A |
| Maximum Power Dissipation (Abs): | .3 W |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Transistor Element Material: | SILICON |
| No. of Elements: | 2 |
| Sub-Category: | BIP General Purpose Small Signal |
| Peak Reflow Temperature (C): | 260 |
| Polarity or Channel Type: | PNP |
| Surface Mount: | YES |
| Minimum DC Current Gain (hFE): | 80 |









