Toshiba - RN2610(TE85L,F)

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RN2610(TE85L,F) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number RN2610(TE85L,F)
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 120;
Datasheet RN2610(TE85L,F) Datasheet
NAME DESCRIPTION
Other Names: RN2610(TE85LF)TR
RN2610(TE85LF)DKR
RN2610(TE85LF)CT
Maximum Collector Current (IC): .1 A
Maximum Power Dissipation (Abs): .3 W
Transistor Element Material: SILICON
No. of Elements: 2
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 120
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