Toshiba - RN2709JE

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RN2709JE by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number RN2709JE
Description PNP; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A;
Datasheet RN2709JE Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 200 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 70
No. of Terminals: 5
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .1 W
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F5
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 0.47
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): NOT SPECIFIED
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