RN2711 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	RN2711
Description	PNP; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
Datasheet	RN2711 Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	200 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	BIP General Purpose Small Signal
Surface Mount:	YES
No. of Terminals:	5
Maximum Power Dissipation (Abs):	.2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G5
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	120
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	50 V
Maximum Collector-Base Capacitance:	6 pF
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	.3 V

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