Toshiba - RN2910FE(TPL3,F)

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .8 A; Terminal Position: DUAL;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 420;

BC547ATA by Onsemi is a NPN BJT transistor with a max collector-emitter voltage of 45V and max current of 0.1A, ideal for switching applications. With a min DC current gain of 110 and max power dissipation of 0.625W, it operates at up to 150°C making it suitable for various electronic circuits in different industries. The package style is cylindrical with matte tin finish and through-hole terminals.

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; No. of Terminals: 3;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 65 V;

NXP Semiconductors' BC846BS,115 is a NPN BJT transistor with 2 elements for switching applications. It has a max collector-emitter voltage of 65V, max current of 0.1A, and min DC current gain of 200. With a package style of small outline and peak reflow temp of 260C, it's ideal for high-frequency circuits in automotive electronics.

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 200; No. of Terminals: 3;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 45 V;

MMBT2907AWT1G by Onsemi is a PNP BJT transistor with 3 terminals, max. power dissipation of 0.15W, and max. collector-emitter voltage of 60V. Ideal for amplifier applications, it has a min. DC current gain of 50 and operates at up to 150°C, making it suitable for various electronic circuits.

PNP; Configuration: SINGLE; Nominal Transition Frequency (fT): 250 MHz; No. of Elements: 1; JESD-609 Code: e0; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

SMMBT4403LT1G by Onsemi is a PNP BJT transistor for switching applications. It has a VCEsat of 0.75V, hFE of 100, and IC of 0.6A. With a max operating temperature of 150°C, it is ideal for small outline surface mount designs requiring fast switching speeds up to 200MHz.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;

BC847C-7-F by Diodes Inc. is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 45V and a min DC current gain of 420. It is commonly used for switching applications due to its surface mount capability and max power dissipation of 0.3W.