Toshiba - RN2963CT(TE85L)

  1. Home
  2. Toshiba - RN2963CT(TE85L)
RN2963CT(TE85L) by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number RN2963CT(TE85L)
Description PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): .14 W; Maximum Collector Current (IC): .05 A; Minimum DC Current Gain (hFE): 100; No. of Elements: 2;
Datasheet RN2963CT(TE85L) Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .05 A
Maximum Power Dissipation (Abs): .14 W
Transistor Element Material: SILICON
No. of Elements: 2
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 100
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BC817-40 by Kec

BC817-40

Kec

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .8 A;
JANTX2N2222A by Crystalonics

JANTX2N2222A

Crystalonics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Transistor Application: SWITCHING; Package Style (Meter): CYLINDRICAL;
2N2219A by Itt Semiconductor

2N2219A

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
MMBT3906-7-F by Diodes Incorporated

MMBT3906-7-F

Diodes Incorporated

Diodes Inc. MMBT3906-7-F is a PNP BJT transistor with 3 terminals, max power dissipation of 0.3W, and max collector-emitter voltage of 40V. Ideal for switching applications in small outline packages, it operates b/w -55 to 150°C with a transition frequency of 250MHz.
SMMBT3906LT1G by Onsemi

SMMBT3906LT1G

Onsemi

SMMBT3906LT1G by Onsemi is a PNP BJT with VCEsat of 0.4V, hFE of 30, and IC of 0.2A. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance, 260°C peak reflow temp, and 250MHz fT.
BC817-25 by Dc Components

BC817-25

Dc Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
BC846B by NXP Semiconductors

BC846B

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
MMBT4403LT1G by Onsemi

MMBT4403LT1G

Onsemi

MMBT4403LT1G by Onsemi is a PNP BJT transistor with max VCEsat of 0.75V, hFE of 100, and IC of 0.6A. Ideal for switching applications due to its small outline package style and high transition frequency of 200MHz. With a max operating temp of 150°C, it offers reliable performance in various electronic circuits.
2N2222A by New England Semiconductor

2N2222A

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT2222ALT1 by Shenzhen Luguang Electronic Technology

MMBT2222ALT1

Shenzhen Luguang Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
2N3906 by Loras Industries

2N3906

Loras Industries

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC547B by Secos

BC547B

Secos

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Collector Current (IC): .1 A; No. of Elements: 1;
MMBT3904 by Jiangsu Changjiang Electronics Technology

MMBT3904

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .2 A;
BC817-25 by National Semiconductor

BC817-25

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
MMBT3904 by Onsemi

MMBT3904

Onsemi

MMBT3904 by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 40V, hFE of 30, and max. operating temp. of 150°C. Ideal for switching applications due to its small outline package style and high transition frequency of 300MHz. It features Gull Wing terminals in a plastic/epoxy body suitable for surface mount assembly.
2N2907A by Siemens

2N2907A

Siemens

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;
BC847BLT3G by Onsemi

BC847BLT3G

Onsemi

BC847BLT3G by Onsemi is a small signal NPN bipolar junction transistor with a max collector-emitter voltage of 45V and a min DC current gain of 200. It is commonly used in applications such as amplifiers, switches, and general-purpose circuits.
BC547BT&A by Continental Device India

BC547BT&A

Continental Device India

BC547BT&A by Continental Device India is a NPN BJT with 3 terminals, hFE of 200, and max IC of 0.1A. Ideal for switching applications, it has a max VCE of 45V and operates up to 150°C. The transistor's package is cylindrical with matte tin finish in a through-hole terminal form.
BC817-40 by Samsung

BC817-40

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .8 A; Terminal Position: DUAL;
MMBT2907A by Infineon Technologies

MMBT2907A

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .6 A;