RN2965FE by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	RN2965FE
Description	PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A;
Datasheet	RN2965FE Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	200 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	BIP General Purpose Small Signal
Polarity or Channel Type:	PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	80
Terminal Finish:	TIN LEAD
JESD-609 Code:	e0
No. of Terminals:	6
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	.1 W
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F6
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Additional Features:	BUILT IN BIAS RESISTOR RATIO IS 21.37
Maximum Operating Temperature:	150 Cel

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