Toshiba - RN4989AFS

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RN4989AFS by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number RN4989AFS
Description NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .05 W; Maximum Collector Current (IC): .08 A; Package Shape: RECTANGULAR;
Datasheet RN4989AFS Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .08 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN AND PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 70
No. of Terminals: 6
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .05 W
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 0.46
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): NOT SPECIFIED
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