Toshiba - RN49P1CT

  1. Home
  2. Toshiba - RN49P1CT
RN49P1CT by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number RN49P1CT
Description NPN AND PNP; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .05 A; Package Style (Meter): CHIP CARRIER; Maximum Collector-Emitter Voltage: 20 V;
Datasheet RN49P1CT Datasheet
NAME DESCRIPTION
Package Body Material: UNSPECIFIED
Maximum Collector Current (IC): .05 A
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Polarity or Channel Type: NPN AND PNP
Surface Mount: YES
No. of Terminals: 6
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 20 V
Terminal Position: BOTTOM
Package Style (Meter): CHIP CARRIER
JESD-30 Code: R-XBCC-N6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Additional Features: BUILT IN BAIS RESISTOR RATIO IS 1
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BC846B by Diodes Incorporated

BC846B

Diodes Incorporated

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
2N3904 by Unisonic Technologies

2N3904

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A;
BC817-40 by Samsung

BC817-40

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .8 A; Terminal Position: DUAL;
BC817-25W,115 by NXP Semiconductors

BC817-25W,115

NXP Semiconductors

NXP Semiconductors' BC817-25W,115 is a NPN BJT transistor with VCEsat of 0.7V and hFE of 160. Ideal for switching applications, it has a max IC of 0.5A and operates up to 150°C. With a compact small outline package, it features GULL WING terminals for surface mount assembly.
MMBT3906T-7-F by Diodes Incorporated

MMBT3906T-7-F

Diodes Incorporated

Diodes Inc. MMBT3906T-7-F is a PNP BJT with VCEsat of 0.4V, hFE of 30, and fT of 250MHz. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and max operating temp of 150°C. Features GULL WING terminals, RECTANGULAR package shape, and SILICON transistor element material.
2N2219A by International Devices

2N2219A

International Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC817-25,235 by NXP Semiconductors

BC817-25,235

NXP Semiconductors

NXP Semiconductors' BC817-25,235 is a NPN BJT transistor with max VCEsat of 0.7V and hFE of 160. Ideal for switching applications, it has a max IC of 0.5A and operates up to 150°C. Its small outline package with gull wing terminals makes it suitable for surface mount designs.
MMBT3906 by Nte Electronics

MMBT3906

Nte Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Transistor Application: AMPLIFIER;
MMBT2222A by Good-ark Electronics

MMBT2222A

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON;
JANTX2N2222AUA/TR by Microsemi

JANTX2N2222AUA/TR

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Terminal Form: NO LEAD; Terminal Position: DUAL;
MMBT2222A-TP by Micro Commercial Components

MMBT2222A-TP

Micro Commercial Components

MMBT2222A-TP by Micro Commercial Components is a NPN BJT transistor with 3 terminals. It has a max power dissipation of 0.35W, hFE of 75, and operates up to 150°C. Ideal for amplifier applications due to its small outline package style and high transition frequency of 300MHz.
BC847B by General Semiconductor

BC847B

General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC847C by Lite-on Semiconductor

BC847C

Lite-on Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 420;
2N3904TF by Onsemi

2N3904TF

Onsemi

2N3904TF by Onsemi is a NPN bipolar junction transistor with max. collector-emitter voltage of 40V and max. collector current of 0.2A. It has a min. DC current gain of 30, making it suitable for switching applications with a nominal transition frequency of 300MHz. The package style is cylindrical with matte tin terminal finish, ideal for through-hole mounting in various electronic circuits.
BC846B by Kodenshi Auk

BC846B

Kodenshi Auk

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .1 A;
2N3906 by Weitron Technology

2N3906

Weitron Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Package Style (Meter): CYLINDRICAL;
2N2222A by Dionics-usa

2N2222A

Dionics-usa

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MMBT3906 by General Semiconductor

MMBT3906

General Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; JESD-30 Code: R-PDSO-G3;
BC547CTA by Fairchild Semiconductor

BC547CTA

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC817-25W,115 by Nexperia

BC817-25W,115

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Package Shape: RECTANGULAR;