Toshiba - S-AU31A

WIDE BAND LOW POWER;

WIDE BAND LOW POWER; Maximum Operating Frequency: 13500 MHz; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Gain: 10 dB; Maximum Input Power (CW): 15 dBm;

Broadcom's MGA-62563-TR1 is a GAAS RF amplifier with 13dB gain, operating from 100MHz to 3GHz. It has a max input power of 21dBm and VSWR of 2, suitable for wideband low-power applications. The component features surface mounting and requires 3/5V power supplies, drawing a max current of 77mA.

TGA2578 by Qorvo is a GAN technology RF amplifier with 27 dB gain, operating from 2-6 GHz. It has a max input power of 25 dBm and VSWR of 10, suitable for wideband high-power applications. With a compact design and surface mount feature, it can handle temperatures up to 275°C.

HMC326MS8GE by Analog Devices is a wide band medium power RF amplifier with 18 dB gain and 50 ohm impedance. It operates b/w 3-4.5 GHz, handling up to 15 dBm CW input power. This component is ideal for applications requiring high frequency amplification in RF and microwave systems.

WIDE BAND LOW POWER; Construction: COAXIAL; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -54 Cel; Characteristic Impedance: 50 ohm; Maximum Voltage Standing Wave Ratio: 2.3;

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Gain: 21.5 dB;

Qorvo's NBB-300-T1 is a ceramic RF amplifier with 20 dBm CW input power, 2.5 VSWR, and 9 dB gain. Ideal for wideband low-power applications from 0 to 12000 MHz, it operates b/w -45°C to +85°C temperatures and requires a 3.9V power supply.

Mitsubishi Electric's RA35H1516M is a narrow band high power RF amplifier module with 20 dBm CW input power and VSWR of 3. Operating from -30°C to 110°C, it covers frequencies b/w 154-162 MHz. Ideal for applications requiring high-power amplification in the RF & microwave domain.

WIDE BAND LOW POWER;

Qorvo's RDA1005LTR13 is a wide band low power RF amplifier with 15.5 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for surface mount applications in RF & microwave systems.

ERA-50SM by Mini-circuits is a wide band low power RF amplifier with 16 dB gain, operating from 0 to 1500 MHz. It has a max input power of 13 dBm and VSWR of 1.2, suitable for RF & microwave applications requiring surface mount construction.

WIDE BAND LOW POWER;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Gain: 12 dB;

RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Package Equivalence Code: SOP16(UNSPEC); No. of Functions: 2;

WIDE BAND MEDIUM POWER; JESD-609 Code: e4; Terminal Finish: NICKEL PALLADIUM GOLD;

WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 20; Construction: COMPONENT; Gain: 20.5 dB; Maximum Input Power (CW): 13 dBm; Additional Features: LOW NOISE;

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Terminal Finish: Matte Tin (Sn);

The NXP Semiconductors MW7IC008NT1 is a MOS technology RF amplifier with 2 functions, offering a gain of 21.5 dB and operating frequency range from 100 MHz to 1000 MHz. It has a max input power of 38 dBm and VSWR of 10, suitable for wideband high-power applications in RF and microwave systems. The component comes in a plastic/epoxy package with matte tin finish, featuring 24 terminals for surface mount installation at a power supply of 28V.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 20 dBm;