Toshiba - S-AU33

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Minimum Operating Frequency: 1805 MHz; Package Equivalence Code: FLNG,.67"H.SPACE; Terminal Finish: Matte Tin (Sn);

AH202-F by Triquint Semiconductor is a wide band medium power RF amplifier with 14 dB gain. It operates b/w 30 MHz to 2200 MHz, handling up to 16 dBm CW input power. This component, housed in a plastic/epoxy package, is ideal for applications requiring high frequency amplification in RF and microwave systems.

The NXP Semiconductors MMZ09312BT1 is a wide band medium power RF amplifier with 29 dB gain, operating from 400 MHz to 1000 MHz. It has a max input power of 14 dBm and requires a 5V power supply with a max current draw of 83 mA. Ideal for applications requiring surface mount components in RF and microwave systems.

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -40 Cel; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier;

Qorvo's SPF5122ZSR is a GAAS RF amplifier with 11.2 dB gain, operating from 50 MHz to 4000 MHz. It has a max input power of 27 dBm and operates at temperatures ranging from -40°C to 85°C. Ideal for wideband medium-power applications, it features a surface-mount package with matte tin terminals.

Analog Devices' HMC863ALC4TR-R5 is a wide band medium power RF amplifier with 20.5 dB gain, operating from 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7. Ideal for RF & microwave applications requiring high performance in temperatures ranging from -40 to 85°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 12; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 5;

Analog Devices' HMC963LC4TR-R5 is a wide band low power RF amplifier with 16.5 dB gain, operating frequency range of 6-26.5 GHz, and 50 ohm impedance. It features PHEMT technology, ceramic package, and can handle up to 0 dBm input power. Ideal for RF & microwave applications requiring high performance in compact designs.

HMC409LP4ETR by Analog Devices is a RF amplifier with 28 dB gain, operating frequency range of 3.3-3.8 GHz, and max input power of 10 dBm. It is designed for narrowband medium power applications in RF & microwave systems requiring a characteristic impedance of 50 ohms. The component features a surface mount package body material made of plastic/epoxy, suitable for temperatures ranging from -40 to 85°C.

Broadcom's MGA-53543-BLKG is a wide band low power RF amplifier with 14 dB gain. Operating from 50 MHz to 6 GHz, it handles up to 13 dBm CW input power and has a VSWR of 2. Ideal for RF applications requiring a compact component with a characteristic impedance of 50 ohms.

WIDE BAND LOW POWER; Maximum Operating Temperature: 85 Cel; Maximum Operating Frequency: 1200 MHz; Minimum Operating Temperature: -54 Cel; Minimum Operating Frequency: 10 MHz; Maximum Input Power (CW): 6 dBm;

HMC441LM1 by Analog Devices is a wide band low power RF amplifier with 11 dB gain and 15 dBm max input power. It operates b/w 7-15.5 GHz, has a characteristic impedance of 50 ohms, and requires a 5V power supply. Ideal for RF & microwave applications requiring high performance in a compact package.

BGU6005/N2X by NXP Semiconductors is a narrow band low power RF amplifier with 17.5 dB gain and 50 ohm impedance. It operates b/w 1559-1610 MHz, handles up to 10 dBm input power, and has a max VSWR of 1.43. This component is ideal for applications requiring surface mounting in RF & microwave systems.

Analog Devices' HMC455LP3 is a GAAS RF amplifier with 9dB gain, operating from 1700-2500MHz. It has a max input power of 25dBm and VSWR of 1.4, suitable for narrowband medium-power applications in RF & microwave systems. The component features a plastic/epoxy package, surface mounting, and operates b/w -40 to 85°C.

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 4; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Package Equivalence Code: SL,4GW-LD,.085CIR;

TRF37A75IDSGT by Texas Instruments is a wide band low power RF amplifier with 12 dB gain and 50 ohm impedance. It operates from 40 MHz to 6 GHz, handling up to 10 dBm CW input power. Ideal for applications requiring surface mount components in RF and microwave systems.

WIDE BAND MEDIUM POWER; Gain: 27 dB; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 9500 MHz;

Analog Devices' HMC498LC4 is a GAAS RF amplifier with 18dB gain, operating from 17-24GHz. It has a max input power of 10dBm and operates on a 5V supply. This wideband medium-power device is ideal for RF and microwave applications requiring high performance in a compact ceramic package.

SKY65404-31 by Skyworks Solutions is a wide band low power RF amplifier with 11 dB gain, operating from 4900 MHz to 5900 MHz. It has a max input power of 10 dBm and operates on a 3V power supply. Ideal for applications requiring surface mount construction in RF & microwave systems.

The Mini-circuits LEE-39+ is a wide band low power RF amplifier with 18.5 dB gain, operating from 0 to 8000 MHz. It has a max input power of 13 dBm and VSWR of 1.6, suitable for surface mount applications in RF & microwave systems.