Toshiba - S-AU84

  1. Home
  2. Toshiba - S-AU84
S-AU84 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number S-AU84
Description RF/Microwave Amplifiers; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: CERAMIC; Maximum Supply Current: 440 mA; Maximum Operating Temperature: 85 Cel;
Datasheet S-AU84 Datasheet
NAME DESCRIPTION
Package Body Material: CERAMIC
No. of Functions: 1
No. of Terminals: 6
Package Equivalence Code: DILCC6,.25,67
Maximum Operating Temperature: 85 Cel
Sub-Category: RF/Microwave Amplifiers
Maximum Supply Current: 440 mA
Minimum Operating Temperature: -20 Cel
Power Supplies (V): 3.5
Mounting Feature: SURFACE MOUNT
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MSA-0686-BLK by Broadcom

MSA-0686-BLK

Broadcom

Broadcom's MSA-0686-BLK is a RF amplifier with 16.5 dB gain, operating from 0 to 800 MHz. It has a max input power of 13 dBm and VSWR of 1.7, suitable for wideband low-power applications requiring a characteristic impedance of 50 ohms.
HMC903LP3E by Analog Devices

HMC903LP3E

Analog Devices

Analog Devices' HMC903LP3E is a GAAS RF amplifier with 17.5 dB gain, operating from 6-17 GHz. It has a max input power of 10 dBm and draws 110 mA at 3.5 V. Ideal for wideband low-power applications, this component offers high performance in plastic/epoxy packaging for surface mount assembly.
SGL0363Z by Qorvo

SGL0363Z

Qorvo

Qorvo's SGL0363Z is a wide band low power RF amplifier with 15 dB gain and 50 ohm impedance. It operates from 5 MHz to 2 GHz, handling up to 18 dBm CW input power. Ideal for RF applications requiring high performance in temperatures ranging from -40°C to 85°C.
BGU8019X by NXP Semiconductors

BGU8019X

NXP Semiconductors

The NXP Semiconductors BGU8019X is a RF & Microwave Amplifier with 16 dB Gain, operating from 1559 MHz to 1610 MHz. It has a Max Input Power of 10 dBm and operates in temperatures ranging from -40°C to 85°C. Ideal for narrow band low power applications with a characteristic impedance of 50 ohm.
HMC549MS8G by Hittite Microwave

HMC549MS8G

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;
SGL-0363Z by Sirenza Microdevices

SGL-0363Z

Sirenza Microdevices

Sirenza Microdevices' SGL-0363Z is a wide band low power RF amplifier with 17 dB gain and 50 ohm impedance. It operates from 5 MHz to 2000 MHz, handling up to 18 dBm CW input power. Ideal for applications requiring high frequency amplification in RF & microwave systems.
HMC441LP3TR by Analog Devices

HMC441LP3TR

Analog Devices

HMC441LP3TR by Analog Devices is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 6.5 to 13.5 GHz, handles up to 15 dBm CW input power, and draws a max of 115 mA at 5 V supply. This component is ideal for RF and microwave applications requiring surface mount construction in the -40°C to +85°C temperature range.
MW7IC930NR1 by Freescale Semiconductor

MW7IC930NR1

Freescale Semiconductor

NARROW BAND HIGH POWER; Package Body Material: PLASTIC/EPOXY; Technology: MOS; Minimum Operating Frequency: 920 MHz; Package Equivalence Code: FLNG,.67"H.SPACE; JESD-609 Code: e3;
LT5524EFE#PBF by Analog Devices

LT5524EFE#PBF

Analog Devices

LT5524EFE#PBF by Analog Devices is a wide band low power RF amplifier with 50 ohm impedance, 4.5 dB gain, and 540 MHz max frequency. Ideal for applications requiring amplification in RF and microwave circuits operating b/w -40°C to 85°C.
XP1035-QH-0G00 by M/a-com Technology Solutions

XP1035-QH-0G00

M/a-com Technology Solutions

XP1035-QH-0G00 by M/a-com is a GAAS technology RF amplifier with 26 dB gain, operating from 5900 MHz to 9500 MHz. It has a max input power of 15 dBm and operates on a 6V power supply. Ideal for wideband medium-power applications, it features surface mounting and can withstand temperatures from -55°C to 85°C.
TQL9062 by Qorvo

TQL9062

Qorvo

The Qorvo TQL9062 is a wide band medium power RF amplifier with 15 dB gain, operating from 500 MHz to 6 GHz. It has a max input power of 33 dBm and VSWR of 1.29, suitable for various RF applications. Constructed with E-PHEMT technology, it features a plastic/epoxy package body and operates b/w -40°C to 105°C.
MGA-30889-TR1G by Broadcom

MGA-30889-TR1G

Broadcom

Broadcom's MGA-30889-TR1G is a GAAS RF amplifier with 14.6dB gain, operating from 40MHz to 2600MHz. It has a max input power of 20dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems.
RF6886TR13 by Rf Micro Devices

RF6886TR13

Rf Micro Devices

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; Power Supplies (V): 3.6;
ADL8142ACPZN-R7-CSL by Analog Devices

ADL8142ACPZN-R7-CSL

Analog Devices

WIDE BAND LOW POWER;
MGA-30789-BLKG by Broadcom

MGA-30789-BLKG

Broadcom

Broadcom's MGA-30789-BLKG is a wide band medium power RF amplifier with 8 dB gain. It operates from 2-6 GHz, handling up to 24 dBm CW input power. This surface mount component is ideal for RF and microwave applications requiring high performance in plastic/epoxy package.
HMC441LM1 by Hittite Microwave

HMC441LM1

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 8; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Supply Current: 115 mA;
HMC565LC5 by Analog Devices

HMC565LC5

Analog Devices

Analog Devices' HMC565LC5 is a wide band low power RF amplifier with 16 dB gain and 50 ohm impedance. Operating from 6-20 GHz, it handles up to 10 dBm CW input power. Ideal for applications requiring high frequency amplification in compact designs.
MSA-1105 by Broadcom

MSA-1105

Broadcom

Broadcom's MSA-1105 is a RF & Microwave Amplifier with 13 dBm CW input power, 1.7 VSWR, and 50 ohm impedance. Ideal for wide band low power applications from 50 MHz to 1300 MHz, it operates b/w -25°C to 85°C with a max supply current of 70 mA.
RFPA3800TR7 by Qorvo

RFPA3800TR7

Qorvo

The Qorvo RFPA3800TR7 is a GAAS wide band high power amplifier with 12 dB gain, operating from 150 MHz to 960 MHz. It has a max input power of 28 dBm and VSWR of 5, suitable for RF & microwave applications requiring up to 700 mA at 7V supply voltage.
MSA-1105-TR1 by Broadcom

MSA-1105-TR1

Broadcom

Broadcom's MSA-1105-TR1 is a RF amplifier with 10dB gain, operating from 50MHz to 1300MHz. It has a max input power of 13dBm and VSWR of 1.7, suitable for wideband low-power applications. This component features a plastic/epoxy package body, surface mounting feature, and operates at 5.5V with a max supply current of 70mA.