Toshiba - S-AV35A

  1. Home
  2. Toshiba - S-AV35A
S-AV35A by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number S-AV35A
Description NARROW BAND HIGH POWER; Minimum Operating Frequency: 154 MHz; Construction: MODULE; Characteristic Impedance: 50 ohm; Gain: 35 dB; Maximum Operating Temperature: 100 Cel;
Datasheet S-AV35A Datasheet
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 3
Construction: MODULE
Maximum Input Power (CW): 13 dBm
Minimum Operating Frequency: 154 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 162 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Minimum Operating Temperature: -30 Cel
Gain: 35 dB
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SBF4089ZSR by Qorvo

SBF4089ZSR

Qorvo

Qorvo's SBF4089ZSR is a GAAS RF amplifier with 13.2 dB gain, operating from 0-500 MHz. It has a max input power of 15 dBm and operates at temperatures ranging from -40 to 85°C. Ideal for wideband low-power applications, it features a surface-mount package with 3 terminals and requires a 4.9V power supply.
QPA9419 by Qorvo

QPA9419

Qorvo

RF/Microwave Amplifiers;
NBB-310-T1 by Qorvo

NBB-310-T1

Qorvo

Qorvo's NBB-310-T1 is a ceramic RF amplifier with 20 dBm CW input power, 9 dB gain, and 50 ohm impedance. Ideal for wide band low power applications from 0 to 12000 MHz, it operates b/w -45°C to 85°C. Suitable for surface mount installations with a voltage supply of 5V.
HMC460LC5TR by Analog Devices

HMC460LC5TR

Analog Devices

HMC460LC5TR by Analog Devices is a wide band low power RF amplifier with 10 dB gain and 50 ohm impedance. It operates from 0 to 20,000 MHz, handling up to 18 dBm CW input power. This ceramic-packaged component is ideal for RF and microwave applications requiring high performance in a compact form factor.
MAX2640EUT-T by Maxim Integrated

MAX2640EUT-T

Maxim Integrated

MAX2640EUT-T by Maxim Integrated is a wide band low power RF amplifier with gain of 12.8 dB, operating from 300 MHz to 1500 MHz. It has a max input power of 5 dBm and operates on 3/5 V supplies. Ideal for RF & microwave applications requiring surface mount construction and characteristic impedance of 50 ohm.
MGA-62563-TR1 by Agilent Technologies

MGA-62563-TR1

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 3000 MHz;
MGA-87563-BLKG by Broadcom

MGA-87563-BLKG

Broadcom

Broadcom's MGA-87563-BLKG is a GAAS RF amplifier with 50 ohm impedance, operating from 500 MHz to 4 GHz. It has a CW input power of 13 dBm and VSWR of 1.8, suitable for wideband low-power applications in temperatures ranging from -40°C to 85°C. The component features a surface-mount package with matte tin terminals, making it ideal for various RF and microwave systems.
HMC564LC4 by Hittite Microwave

HMC564LC4

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Gain: 14 dB;
TQP3M9037 by Qorvo

TQP3M9037

Qorvo

TQP3M9037 by Qorvo is a wide band medium power RF amplifier with 18.5 dB gain, operating from 700 MHz to 6000 MHz. It has a max input power of 22 dBm and operates at temperatures ranging from -40°C to 105°C. Ideal for applications requiring high frequency amplification in RF and microwave systems.
SGA-3363 by Sirenza Microdevices

SGA-3363

Sirenza Microdevices

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;
AH202-F by Wj Communications

AH202-F

Wj Communications

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 28; Package Body Material: PLASTIC/EPOXY; Gain: 14 dB; Terminal Finish: Matte Tin (Sn);
RF6886TR7 by Qorvo

RF6886TR7

Qorvo

Qorvo's RF6886TR7 is a wide band high power amplifier with 31dB gain, operating from 433MHz to 470MHz. It has a max input power of 12dBm and VSWR of 5, suitable for RF applications requiring high power amplification in the frequency range. The component is designed for surface mount installation in various electronic systems.
A64 by TE Connectivity

A64

TE Connectivity

TE Connectivity's A64 is a RF & Microwave Amplifier with a metal package body. It operates at temperatures ranging from 0 to 50 °C and requires a power supply of 15V. With 4 terminals and a max supply current of 38mA, it is suitable for various applications in the field of RF and microwave amplification.
ADL5536ARKZ-R7 by Analog Devices

ADL5536ARKZ-R7

Analog Devices

ADL5536ARKZ-R7 by Analog Devices is a wide band low power RF amplifier with 18.1 dB gain, suitable for frequencies ranging from 20 MHz to 1000 MHz. It can handle a max input power of 20 dBm and operates in temperatures b/w -40°C to 85°C. Ideal for RF and microwave applications requiring high gain amplification within the specified frequency range.
HMC907A by Analog Devices

HMC907A

Analog Devices

HMC907A by Analog Devices is a RF & Microwave Amplifier with 25 dBm CW input power, 7 VSWR, and 12.5 dB gain. Ideal for wide band medium power applications, it operates from -55°C to 85°C within the frequency range of 200 MHz to 22 GHz.
GALI-39 by Mini-circuits

GALI-39

Mini-circuits

GALI-39 by Mini-circuits is a wide band low power RF amplifier with 17.7 dB gain, operating from 0 to 7000 MHz. It has a max input power of 13 dBm and VSWR of 2.3, suitable for RF & microwave applications requiring surface mount construction.
AD8350ARZ20-REEL7 by Analog Devices

AD8350ARZ20-REEL7

Analog Devices

AD8350ARZ20-REEL7 by Analog Devices is a wide band medium power RF amplifier with 19 dB gain and 1000 MHz max operating frequency. It can handle up to 8 dBm CW input power, making it suitable for various RF and microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.
MGA-545P8-TR1G by Agilent Technologies

MGA-545P8-TR1G

Agilent Technologies

Agilent Technologies' MGA-545P8-TR1G is a wide band medium power RF amplifier with 10.5 dB gain, operating from 50 MHz to 7000 MHz. It can handle up to 20 dBm CW input power and has a characteristic impedance of 50 ohm. Ideal for RF & microwave applications requiring high frequency amplification in component construction.
HMC717ALP3E by Analog Devices

HMC717ALP3E

Analog Devices

Analog Devices' HMC717ALP3E is a wide band low power RF amplifier with 11 dB gain, operating from 4.8 GHz to 6 GHz. It has a max input power of 20 dBm and VSWR of 1.43, suitable for applications requiring high frequency amplification in RF & microwave systems. The component is housed in a plastic/epoxy package with matte tin finish, featuring PHEMT technology and surface mounting feature.
HMC694LP4ETR by Hittite Microwave

HMC694LP4ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; No. of Functions: 1;