Toshiba - S-AV37A

  1. Home
  2. Toshiba - S-AV37A
S-AV37A by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number S-AV37A
Description NARROW BAND HIGH POWER; Gain: 35 dB; Construction: MODULE; Maximum Operating Frequency: 162 MHz; Minimum Operating Temperature: -30 Cel; Maximum Voltage Standing Wave Ratio: 3;
Datasheet S-AV37A Datasheet
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 3
Construction: MODULE
Maximum Input Power (CW): 13 dBm
Minimum Operating Frequency: 154 MHz
Characteristic Impedance: 50 ohm
Maximum Operating Temperature: 100 Cel
Maximum Operating Frequency: 162 MHz
RF or Microwave Device Type: NARROW BAND HIGH POWER
Minimum Operating Temperature: -30 Cel
Gain: 35 dB
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

SKY65404-31 by Skyworks Solutions

SKY65404-31

Skyworks Solutions

SKY65404-31 by Skyworks Solutions is a wide band low power RF amplifier with 11 dB gain, operating from 4900 MHz to 5900 MHz. It has a max input power of 10 dBm and operates on a 3V power supply. Ideal for applications requiring surface mount construction in RF & microwave systems.
TGA4803 by Qorvo

TGA4803

Qorvo

Qorvo's TGA4803 is a wide band medium power RF amplifier with 8 dB gain and 18 dBm CW input power. Operating from 0-50000 MHz, it is ideal for various RF applications requiring high performance amplification in components.
MGA-82563-TR1G by Agilent Technologies

MGA-82563-TR1G

Agilent Technologies

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Terminal Finish: Tin (Sn);
CMPA801B025F by Wolfspeed

CMPA801B025F

Wolfspeed

RF/Microwave Amplifiers;
A2I09VD015NR1 by NXP Semiconductors

A2I09VD015NR1

NXP Semiconductors

WIDE BAND LOW POWER; Terminal Finish: TIN; JESD-609 Code: e3;
TQP3M9008 by Qorvo

TQP3M9008

Qorvo

TQP3M9008 by Qorvo is a wide band medium power RF amplifier with 19 dB gain and 50 ohm impedance. It operates from 50 MHz to 4000 MHz, with a max input power of 23 dBm. Ideal for RF applications requiring high performance in plastic/epoxy package.
SPF-5189Z by Qorvo

SPF-5189Z

Qorvo

Qorvo's SPF-5189Z is a GAAS RF amplifier with 11.3 dB gain, operating from 50 MHz to 4 GHz. It has a max input power of 27 dBm and operates on a 5V supply. Ideal for wideband medium-power applications, it features surface mounting and a plastic/epoxy package body.
ERA-50SM+ by Mini-circuits

ERA-50SM+

Mini-circuits

ERA-50SM+ by Mini-circuits is a wide band low power RF amplifier with 16 dB gain, operating from 0 to 1500 MHz. It has a max input power of 13 dBm and VSWR of 1.2, making it ideal for RF & microwave applications requiring surface mount amplification in the temperature range of -45 to 85°C.
CMD192C5 by Custom Mmic Design Services

CMD192C5

Custom Mmic Design Services

WIDE BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Gain: 17 dB; JESD-609 Code: e4; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); Additional Features: LOW NOISE;
PMA3-83LN+ by Mini-circuits

PMA3-83LN+

Mini-circuits

The Mini-circuits PMA3-83LN+ is a wide band low power RF amplifier with a gain of 19.9 dB, suitable for frequencies ranging from 500 MHz to 8000 MHz. It can handle a max input power of 16 dBm and operates in temperatures from -40°C to 105°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.
TGA2526 by Qorvo

TGA2526

Qorvo

TGA2526 by Qorvo is a GAAS wide band low power RF amplifier with a gain of 17.5 dB. It operates at frequencies ranging from 2000 MHz to 20000 MHz and can handle a max input power of 22 dBm. This component is commonly used in RF and microwave applications.
GALI-6F+F55 by Mini-circuits

GALI-6F+F55

Mini-circuits

GALI-6F+F55 by Mini-circuits is a RF & Microwave Amplifier with 4.8V power supply, operating from -45°C to 85°C. It features a plastic/epoxy package, bipolar technology, and surface mounting. Ideal for applications requiring high-frequency signal amplification in various electronic systems.
HMC903LP3E by Hittite Microwave

HMC903LP3E

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; JESD-609 Code: e3;
HMC752LC4TR by Hittite Microwave

HMC752LC4TR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Maximum Operating Temperature: 85 Cel;
TGA2578-CP by Triquint Semiconductor

TGA2578-CP

Triquint Semiconductor

WIDE BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 10; Technology: GAN; Maximum Supply Current: 400 mA; Maximum Voltage Standing Wave Ratio: 10;
MGA-31189-BLKG by Broadcom

MGA-31189-BLKG

Broadcom

Broadcom's MGA-31189-BLKG is a GAAS RF amplifier with 19dB gain, operating from 50MHz to 2000MHz. It has a max input power of 25dBm and requires a 5V power supply. Ideal for wideband medium-power applications, this component features surface mounting and a characteristic impedance of 50Ω.
HMC659LC5 by Hittite Microwave

HMC659LC5

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 32; Package Body Material: PLASTIC/EPOXY; Minimum Operating Temperature: -40 Cel; Terminal Finish: Gold (Au) - with Nickel (Ni) barrier;
HMC311LP3E by Analog Devices

HMC311LP3E

Analog Devices

HMC311LP3E by Analog Devices is a GAAS RF amplifier with 12dB gain, operating from 0-6000MHz. It has a max input power of 10dBm and operates on a 5V power supply. Ideal for wideband low-power applications in RF & microwave systems due to its surface mount package and 50 ohm characteristic impedance.
935363184528 by NXP Semiconductors

935363184528

NXP Semiconductors

WIDE BAND LOW POWER; JESD-609 Code: e3; Terminal Finish: Tin (Sn);
HMC902LP3ETR by Hittite Microwave

HMC902LP3ETR

Hittite Microwave

WIDE BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Operating Frequency: 10000 MHz;