SSM3J15FV,L3F(T by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	SSM3J15FV,L3F(T
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Feedback Capacitance (Crss): 3.5 pF; Terminal Form: FLAT;
Datasheet	SSM3J15FV,L3F(T Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	3.5 pF
Maximum Drain Current (ID):	.1 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
No. of Terminals:	3
Minimum DS Breakdown Voltage:	30 V
Maximum Power Dissipation (Abs):	.15 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Drain-Source On Resistance:	12 ohm

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