Toshiba - SSM3J326T(TE85L)

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SSM3J326T(TE85L) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number SSM3J326T(TE85L)
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.25 W; Maximum Drain Current (ID): 5.6 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet SSM3J326T(TE85L) Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 1.25 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 5.6 A
Maximum Drain Current (Abs) (ID): 5.6 A
Sub-Category: Other Transistors
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
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