Toshiba - SSM3J332R,LF

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SSM3J332R,LF by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number SSM3J332R,LF
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet SSM3J332R,LF Datasheet
NAME DESCRIPTION
Other Names: SSM3J332R,LF(T
SSM3J332RLF(TTR-ND
SSM3J332RLFDKR
SSM3J332R,LF(B
SSM3J332RLF(TCT-ND
SSM3J332RLF(TCT
SSM3J332RLFCT
SSM3J332RLFTR
SSM3J332RLF(TTR
SSM3J332RLF(TDKR-ND
SSM3J332RLF(TDKR
SSM3J332RLF
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 6 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): NOT SPECIFIED
Maximum Drain-Source On Resistance: .042 ohm
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