SSM3J56MFV,L3F(B by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	SSM3J56MFV,L3F(B
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; No. of Terminals: 3; Terminal Form: FLAT;
Datasheet	SSM3J56MFV,L3F(B Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Feedback Capacitance (Crss):	10 pF
Maximum Drain Current (ID):	.8 A
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	YES
No. of Terminals:	3
Minimum DS Breakdown Voltage:	20 V
Maximum Power Dissipation (Abs):	.5 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-F3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.39 ohm

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