Toshiba - SSM3K335R,LF

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SSM3K335R,LF by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number SSM3K335R,LF
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; JESD-30 Code: R-PDSO-F3; No. of Terminals: 3;
Datasheet SSM3K335R,LF Datasheet
NAME DESCRIPTION
Other Names: SSM3K335RLFCT
SSM3K335RLF(TCT
SSM3K335RLFDKR
SSM3K335R,LF(B
SSM3K335RLF
SSM3K335RLFTR
SSM3K335RLF(TTR-ND
SSM3K335RLF(TDKR-ND
SSM3K335R,LF(T
SSM3K335RLF(TCT-ND
SSM3K335RLF(TTR
SSM3K335RLF(TDKR
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Feedback Capacitance (Crss): 20 pF
Maximum Drain Current (ID): 6 A
Maximum Pulsed Drain Current (IDM): 14 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 30 V
Maximum Power Dissipation (Abs): 1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .038 ohm
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