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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | SSM3K341R,LF |
| Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): SMALL OUTLINE; |
| Datasheet | SSM3K341R,LF Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Avalanche Energy Rating (EAS): | 28.9 mJ |
| Other Names: |
SSM3K341RLFCT SSM3K341R,LF(T SSM3K341RLFDKR SSM3K341R,LF(B SSM3K341RLFTR |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Feedback Capacitance (Crss): | 35 pF |
| Maximum Drain Current (ID): | 6 A |
| Maximum Pulsed Drain Current (IDM): | 24 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| No. of Terminals: | 3 |
| Minimum DS Breakdown Voltage: | 60 V |
| Maximum Power Dissipation (Abs): | 1.2 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-F3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | FLAT |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain-Source On Resistance: | .036 ohm |
